A dual-wavelength indium gallium nitride quantum well light emitting diode
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Abstract
We have designed and implemented a monolithic, dual-wavelength blue/green light emitting diode (LED) consisting of two active indium gallium nitride/gallium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p++/n++ InGaN/GaN tunnel junction is inserted between the LEDs, emitting in this proof-of-concept device at 470 nm and 535 nm, respectively. The device has been operated as a three-terminal device with independent electrical control of each LEDs to a nanosecond time scale. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A dual-wavelength indium gallium nitride quantum well light emitting diode</title><author><name sortKey="Ozden, I" uniqKey="Ozden I">I. Ozden</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Agilent Technologies Laboratories, Palo Alto, California 94304</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Agilent Technologies Laboratories, Palo Alto</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Lumileds Lighting, San Jose, California 95131</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Lumileds Lighting, San Jose</wicri:cityArea></affiliation></author><author><name sortKey="Makarona, E" uniqKey="Makarona E">E. Makarona</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Nurmikko, A V" uniqKey="Nurmikko A">A. V. Nurmikko</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Takeuchi, T" uniqKey="Takeuchi T">T. Takeuchi</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Krames, M" uniqKey="Krames M">M. Krames</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0416266</idno><date when="2001-10-15">2001-10-15</date><idno type="stanalyst">PASCAL 01-0416266 AIP</idno><idno type="RBID">Pascal:01-0416266</idno><idno type="wicri:Area/Main/Corpus">010756</idno><idno type="wicri:Area/Main/Repository">00FD22</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light emitting diodes</term><term>Semiconductor quantum wells</term><term>Wide band gap semiconductors</term><term>quantum well devices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>8535B</term><term>7867D</term><term>8107S</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Diode électroluminescente</term><term>Puits quantique semiconducteur</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have designed and implemented a monolithic, dual-wavelength blue/green light emitting diode (LED) consisting of two active indium gallium nitride/gallium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p<sup>++</sup>/n<sup>++</sup> InGaN/GaN tunnel junction is inserted between the LEDs, emitting in this proof-of-concept device at 470 nm and 535 nm, respectively. The device has been operated as a three-terminal device with independent electrical control of each LEDs to a nanosecond time scale. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>79</s2></fA05><fA06><s2>16</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>A dual-wavelength indium gallium nitride quantum well light emitting diode</s1></fA08><fA11 i1="01" i2="1"><s1>OZDEN (I.)</s1></fA11><fA11 i1="02" i2="1"><s1>MAKARONA (E.)</s1></fA11><fA11 i1="03" i2="1"><s1>NURMIKKO (A. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>TAKEUCHI (T.)</s1></fA11><fA11 i1="05" i2="1"><s1>KRAMES (M.)</s1></fA11><fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Agilent Technologies Laboratories, Palo Alto, California 94304</s1></fA14><fA14 i1="03"><s1>Lumileds Lighting, San Jose, California 95131</s1></fA14><fA20><s1>2532-2534</s1></fA20><fA21><s1>2001-10-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0416266</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have designed and implemented a monolithic, dual-wavelength blue/green light emitting diode (LED) consisting of two active indium gallium nitride/gallium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p<sup>++</sup>/n<sup>++</sup> InGaN/GaN tunnel junction is inserted between the LEDs, emitting in this proof-of-concept device at 470 nm and 535 nm, respectively. 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